DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.



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Saidimov Ya.A.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Rumi R.F.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Umarov F.B.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Abstract

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

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Research Focus International Scientific Journal 3 (3)

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01.00.00 – Physics and mathematics sciences

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